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RFIC Power Amplifier Design Engineer
Accepting applicationsFalcomm · Atlanta, GA
Full-Time Mid_senior CadenceCalibreRFSOI
Posted
4d ago
Category
Eda
Experience
Mid_senior
Country
United States
Falcomm is a fabless semiconductor company developing high-efficiency RF power amplifier chips and RF front-end solutions for communications, aerospace, and defense applications. Our work is focused on turning advanced RF innovation into practical, high-performance products that solve real-world challenges across demanding environments.
This is an opportunity to contribute to cutting-edge semiconductor development in a fast-moving setting where technical depth and execution matter. You'll join a team focused on advancing RF front-end performance and helping bring sophisticated power amplifier solutions from concept into silicon.
As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that support next-generation communications and high-performance RF systems. This role is well suited to someone who enjoys complex technical challenges, works well in a fast-paced engineering environment, and is motivated by seeing advanced semiconductor design translated into real applications.
Responsibilities
Lead RFIC power amplifier design from architecture through tapeout and validation
Drive PA tapeouts using SOI or SiGe technologies
Develop IC layouts and perform PEX extraction as part of the design flow
Perform electromigration analysis to support robust RFIC implementation
Simulate the linear and non-linear behavior of RF power amplifiers to meet performance targets such as gain, linearity, power, and bandwidth
Requirements
Master's or PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design
3+ years of experience in RF power amplifier design and development up to 60GHz, including PA tapeout experience using SOI or SiGe technologies
Strong circuit design skills for RFIC power amplifier design
Deep knowledge of differential and single-ended power amplifiers, including modes of operation, matching, bias, and architecture considerations
Experience with IC layout and PEX extraction, along with performing electromigration analysis and simulating both linear and non-linear RF PA behavior to meet targets for gain, linearity, power, and bandwidth
Proficiency with RFIC simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, and Siemens Calibre, plus experience with EM simulators such as HFSS, Momentum, or EMX
EM knowledge of passive RF components, including couplers, baluns, and matching networks
Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques, and modulation types such as QPSK, APSK, and QAM
Benefits
Stock option plan
Medical, dental, and vision
Paid time off
Family leave
DISCLOSURE:
Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
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This is an opportunity to contribute to cutting-edge semiconductor development in a fast-moving setting where technical depth and execution matter. You'll join a team focused on advancing RF front-end performance and helping bring sophisticated power amplifier solutions from concept into silicon.
As an RFIC Power Amplifier Design Engineer, you will play a central role in shaping PA designs that support next-generation communications and high-performance RF systems. This role is well suited to someone who enjoys complex technical challenges, works well in a fast-paced engineering environment, and is motivated by seeing advanced semiconductor design translated into real applications.
Responsibilities
Lead RFIC power amplifier design from architecture through tapeout and validation
Drive PA tapeouts using SOI or SiGe technologies
Develop IC layouts and perform PEX extraction as part of the design flow
Perform electromigration analysis to support robust RFIC implementation
Simulate the linear and non-linear behavior of RF power amplifiers to meet performance targets such as gain, linearity, power, and bandwidth
Requirements
Master's or PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design
3+ years of experience in RF power amplifier design and development up to 60GHz, including PA tapeout experience using SOI or SiGe technologies
Strong circuit design skills for RFIC power amplifier design
Deep knowledge of differential and single-ended power amplifiers, including modes of operation, matching, bias, and architecture considerations
Experience with IC layout and PEX extraction, along with performing electromigration analysis and simulating both linear and non-linear RF PA behavior to meet targets for gain, linearity, power, and bandwidth
Proficiency with RFIC simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, and Siemens Calibre, plus experience with EM simulators such as HFSS, Momentum, or EMX
EM knowledge of passive RF components, including couplers, baluns, and matching networks
Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques, and modulation types such as QPSK, APSK, and QAM
Benefits
Stock option plan
Medical, dental, and vision
Paid time off
Family leave
DISCLOSURE:
Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
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