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Product Engineer, SiC
Accepting applicationsNavitas Semiconductor · Torrance, CA
Full-Time Associate AIGaNPythonSiC
Posted
4d ago
Category
Manufacturing
Experience
Associate
Country
United States
Job Purpose
Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.
The Product Engineer – SiC supports the development and production of high-voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. This role helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment.
Key Responsibilities And Duties
Execute device characterization across the SiC portfolio, including test planning, measurement, and reporting.
Support the qualification of new technologies and products.
Develop CP and FT test plans and validate test hardware and test programs.
Support cross-functional task forces in resolving critical quality and yield issues.
Analyze CP/FT and characterization data to drive yield and quality improvements.
Support lot disposition, yield monitoring, and sustaining engineering activities.
Drive test-limit optimization and continuous-improvement initiatives.
Perform wafer probing, bench debugging, and root cause analysis.
Collaborate with Test, Reliability, Operations, and Packaging teams.
Qualifications
Required Qualifications
B.S. or M.S. in Electrical Engineering, Physics, or a related field.
2–3 years of experience in high-voltage SiC (or discrete power device) product, test, or characterization engineering.
Experience with semiconductor device analysis and debugging.
Hands-on bench testing experience with high-voltage discrete FETs, including the use of low-voltage (LV) and high-voltage (HV) power supplies, digital multimeters (DMMs), and oscilloscopes.
Strong data-analysis skills (SPC, Cpk, yield).
Familiarity with CP/FT production flows.
Preferred Qualifications
Experience with failure analysis and reliability testing.
Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit).
Knowledge of JMP, Python, or similar data-analysis tools.
What We Offer
A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies.
Hands-on ownership across the full product lifecycle, from silicon bring-up to high-volume manufacturing.
A fast-paced, execution-focused environment with strong mentorship and deep technical expertise across teams.
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Navitas Semiconductor (Nasdaq: NVTS) is a next-generation power semiconductor leader driving innovation in gallium nitride (GaN) and high-voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high-performance computing, energy and grid infrastructure, and industrial electrification.
The Product Engineer – SiC supports the development and production of high-voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. This role helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring-up through high-volume manufacturing and field deployment.
Key Responsibilities And Duties
Execute device characterization across the SiC portfolio, including test planning, measurement, and reporting.
Support the qualification of new technologies and products.
Develop CP and FT test plans and validate test hardware and test programs.
Support cross-functional task forces in resolving critical quality and yield issues.
Analyze CP/FT and characterization data to drive yield and quality improvements.
Support lot disposition, yield monitoring, and sustaining engineering activities.
Drive test-limit optimization and continuous-improvement initiatives.
Perform wafer probing, bench debugging, and root cause analysis.
Collaborate with Test, Reliability, Operations, and Packaging teams.
Qualifications
Required Qualifications
B.S. or M.S. in Electrical Engineering, Physics, or a related field.
2–3 years of experience in high-voltage SiC (or discrete power device) product, test, or characterization engineering.
Experience with semiconductor device analysis and debugging.
Hands-on bench testing experience with high-voltage discrete FETs, including the use of low-voltage (LV) and high-voltage (HV) power supplies, digital multimeters (DMMs), and oscilloscopes.
Strong data-analysis skills (SPC, Cpk, yield).
Familiarity with CP/FT production flows.
Preferred Qualifications
Experience with failure analysis and reliability testing.
Exposure to SiC device physics and reliability mechanisms (gate oxide, avalanche/UIS, short-circuit).
Knowledge of JMP, Python, or similar data-analysis tools.
What We Offer
A front-row seat to the future of power electronics through industry-leading SiC and GaN technologies.
Hands-on ownership across the full product lifecycle, from silicon bring-up to high-volume manufacturing.
A fast-paced, execution-focused environment with strong mentorship and deep technical expertise across teams.
Show more Show less