AS
Process Engineer
Accepting applicationsAGNIT Semiconductors · Bengaluru, Karnataka, India
Full-Time Mid_senior GaNRFSiCaterf
Posted
6d ago
Category
Manufacturing
Experience
Mid_senior
Country
India
Job Overview:
In this role, you will be pivotal in developing C-band and X-band GaN HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.
Key Responsibilities:
Design: Design reticles, masks and process flows for developing 0.25 um GaN on SiC HEMTs on 4-inch wafers as well as on smaller pieces
Fabrication: Drive fabrication of such HEMTs in conjunction with a small-volume GaN foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules.
Intermediate characterization and testing: Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow.
Final device deliverable: Own up the device development effort and have final HEMTs fully characterized for DC, pulsed, small-signal and large-signal measurements, and based on electrical data & performance, improve any process step or module or epi-stack, iteratively, until desired performance specs of HEMTs are achieved.
Documentation and Communication: Produce comprehensive design, fabrication, testing documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making. Collaborate closely with other process engineers, GaN foundry team, device modeling & reliability engineers, test and RF characterization engineers.
Qualifications:
Education: Master’s or PhD in EE/ECE/E&I Engineering or related field.
Experience: At least 2+ years of experience post-education in transistor design/development/characterization and/or transistor fabrication in cleanroom.
Technical Expertise: Strong knowledge of transistors and some baseline exposure/experience in transistor fabrication in cleanroom. Must be experienced in transistor characterization/testing.
Who does NOT qualify: Candidates who've worked on LEDs, photodetectors, sensors, filters, MEMS, etc. in any capacity.
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In this role, you will be pivotal in developing C-band and X-band GaN HEMTs on 0.25 um process node. You will tackle complex design and device fabrication challenges and work on state-of-the-art projects that push the boundaries of current technology.
Key Responsibilities:
Design: Design reticles, masks and process flows for developing 0.25 um GaN on SiC HEMTs on 4-inch wafers as well as on smaller pieces
Fabrication: Drive fabrication of such HEMTs in conjunction with a small-volume GaN foundry set up by Govt of India inside IISc Bangalore campus, including complete process integration of various process modules.
Intermediate characterization and testing: Work with test engineers to have process test structures electrically tested after each process module to identify potential issues and to ensure module-to-module integrity in the fabrication flow.
Final device deliverable: Own up the device development effort and have final HEMTs fully characterized for DC, pulsed, small-signal and large-signal measurements, and based on electrical data & performance, improve any process step or module or epi-stack, iteratively, until desired performance specs of HEMTs are achieved.
Documentation and Communication: Produce comprehensive design, fabrication, testing documentation and reports. Effectively communicate technical insights and progress to stakeholders and project teams, facilitating informed decision-making. Collaborate closely with other process engineers, GaN foundry team, device modeling & reliability engineers, test and RF characterization engineers.
Qualifications:
Education: Master’s or PhD in EE/ECE/E&I Engineering or related field.
Experience: At least 2+ years of experience post-education in transistor design/development/characterization and/or transistor fabrication in cleanroom.
Technical Expertise: Strong knowledge of transistors and some baseline exposure/experience in transistor fabrication in cleanroom. Must be experienced in transistor characterization/testing.
Who does NOT qualify: Candidates who've worked on LEDs, photodetectors, sensors, filters, MEMS, etc. in any capacity.
Show more Show less