Memory Design Lead

Memory Design Lead
Location: Bengaluru, India
Experience: 10+ Years
Role: Memory Design Lead – SRAM / MRAM
Role Overview
We are looking for an experienced Memory Design Lead with 10+ years of hands-on experience in SRAM and/or MRAM design to lead memory IP development from architecture definition through circuit design, silicon validation, characterization, and production release.
The ideal candidate will have deep expertise in custom memory circuits, memory peripherals, SPICE simulation, PVT/Monte Carlo analysis, margin characterization, and silicon debug, along with a strong track record of delivering production-quality memory IP.
Key Responsibilities
Own the complete memory IP lifecycle from architecture and circuit design to silicon validation and production release.
Define memory architectures and develop robust, high-performance SRAM/MRAM bitcells and peripheral circuits.
Design and optimize sense amplifiers, write drivers, decoders, timing/control logic, reference-generation circuits, and related peripherals.
Drive Power, Performance, and Area (PPA) optimization across memory macros while maintaining robust operation across PVT corners.
Perform read/write margin, retention, variability, mismatch, and Monte Carlo analysis.
Lead silicon bring-up, characterization, failure analysis, simulation-to-silicon correlation, and yield improvement.
Analyze silicon failures and drive root-cause identification and corrective actions across design, technology, and process dimensions.
Work closely with Architecture, Physical Design, DFT, Product Engineering, and Technology/Process teams to deliver production-ready memory IP.
Provide technical direction, review designs, establish methodologies, and mentor memory design engineers.
Required Qualifications
10+ years of industry experience in SRAM and/or MRAM design.
BS/MS in Electrical/Electronics Engineering or a related field.
Proven track record of taking memory IP from architecture/concept through silicon and production.
Strong hands-on expertise in custom circuit design and SPICE-based analysis.
Experience working with advanced CMOS/FinFET technology nodes.
Strong understanding of memory robustness, variability, PVT corners, and silicon characterization.
Demonstrated ability to technically lead complex memory development programs.
Preferred Qualifications
Experience with MBIST, BISR, ECC, redundancy and repair schemes.
Knowledge of memory yield enhancement and production screening methodologies.
Experience with advanced SRAM/MRAM technologies and high-density memory macros.
Strong cross-functional leadership across Design, Technology, DFT, PD, Product, and Validation teams.
Proven experience mentoring engineers and driving technical direction.

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